styn265 thru styn1865 thyristor discretes (scrs) a k g dimensions to-247ad symbol test conditions unit t vj =t vjm t c =85 o c; 180 o sine 65 41 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 520 560 460 500 a i tsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 1350 1300 1050 1030 a 2 s i 2 t (di/dt) cr 150 500 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =300us 10 5 w p gav 0.5 w i trms i tavm o c t vj t vjm t stg -40...+140 140 -40...+125 m d f c mounting torque (m3) mounting force with clip 0.8...1.2 20...120 nm n weight 6 g t vj =t vjm repetitive, it=65a f=50hz, t p =200us v d =2/3v drm i g =0.15a non repetitive, i t =i tavm di g /dt=0.15a/us v rgm 10 v maximum ratings styn265~865 / STYN1065~1865 typical sirectifier g a k k=cathode, a=anode, g=cate styn865 styn1265 styn1665 vrrm v 800 1200 1600 vrsm v 900 1300 1700 styn1865 1800 1900 styn265 styn665 200 300 600 700 STYN1065 1000 1100 p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
styn265 thru styn1865 symbol test conditions characteristic values unit v v t it=65a; tvj =25 o c 1.6 0 v to for power-loss calculations only (t vj =125 o c) 0.85 v r t 11 m v d =6v; t vj =25 o c t vj =-40 o c v gt 1.5 1.6 v v d =6v; t vj =25 o c t vj =-40 o c i gt 100 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.2 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 100 ma tvj=25 o c; tp=10us; ig=0.3a; dig/dt=0.3a/us 150 ma i l dc current r thjc 0.62 k/w dc current r thjh 0.82 k/w a max. acceleration, 50 hz 50 m/s 2 i r , i d t vj =t vjm ; v r =v rrm ; v d =v drm 5 ma tvj=25 o c; v d =1/2vdrm ig=0.3a; dig/dt=0.3a/us t gd 2 us typ. 1.50 styn265~865 STYN1065~1865 thyristor discretes (scrs) 1 10 100 1000 10000 0.1 1 10 i g v g ma v 4 2 1 5 6 3 f ig. 1 gate trigger range i g d , t vj =125c 4: p g av = 0.5 w 5: p gm = 5 w 6: p gm = 10 w 1: i g t , t vj = 125c 2: i g t , t vj = 25c 3: i g t , t vj = -40c 10 100 1000 1 10 100 1000 s t gd ma typ. limit i g f ig. 2 gate controlled delay time t gd t v j = 25c p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
styn265 thru styn1865 thyristor discretes (scrs) 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 i t(av)m 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 0.001 0.01 0.1 1 0 100 200 300 400 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 i ts m i t a s p t w i t(av)m a t amb c t s z thj c k/w v a 1 2 3 4 5 6 7 8 ms 910 1000 i 2 t a 2 s t case a c 500 2000 f ig. 8 t ransient thermal impedance junction to case v t f ig. 3 f orward characteristics t f ig. 4 s urge overload current i t s m : crest value, t: duration t f ig. 5 i 2 t versus time (1-10 ms) f ig. 6 p ower dissipation versus forward current and ambient temperature f ig. 7 max. forward current at case temperature t v j = 125c t v j = 45c 50hz, 80%v r r m t v j = 125c dc 180 sin 120 60 30 r thk a : 0.1 k /w 0.5 k /w 1 k /w 2 k /w 4 k /w 10 k /w t v j = 45c dc 180 sin 120 60 30 30 60 120 180 dc v r = 0 v t v j = 25c t v j = 125c r thj c for various conduction angles d: d r thj c (k /w) dc 0.62 180 0.71 120 0.748 60 0.793 30 0.817 c onstants for z thj c calculation: i r thi (k /w) t i (s) 1 0.206 0.013 2 0.362 0.118 3 0.052 1.488 p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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